Chinese scientists have developed the world’s largest N-polar GaN wafer, an eight-inch marvel expected to cut production costs by 40%. This innovation could significantly enhance applications in satellite communications and electric vehicles, solidifying GaN’s position as a leading material in next-generation semiconductor technology.

Chinese researchers have made a significant advancement in semiconductor technology by creating the world’s largest N-polar gallium nitride (GaN) wafer, measuring eight inches in diameter. This groundbreaking innovation is projected to reduce production costs by 40 percent, facilitating a faster global transition to this technology in sectors such as satellite communications and electric vehicles.

Gallium nitride (GaN) is recognized as a key third-generation compound semiconductor, transformative for high-frequency and high-power applications. Its exceptional properties support advancements in 5G/6G networks, autonomous vehicles, satellite communications, and radar systems. Industry experts anticipate that once mass production achieves a critical point, GaN will instigate remarkable changes across these industries.

The potential of GaN primarily stems from its crystal polarity. Among the two variants—nitrogen-polar (N-polar) and gallium-polar (Ga-polar)—N-polar GaN wafers outperform their counterparts. Until recently, their complex growth processes have restricted global production to small, costly batches. This limitation has now been overcome by the JFS Laboratory team in Wuhan, which successfully fabricated 8-inch N-polar GaN-on-insulator (GaNOI) wafers on silicon substrate, breaking foreign technological monopolies and significantly driving down costs while enhancing device capabilities.

The recent achievement of creating the world’s largest N-polar gallium nitride wafer by Chinese researchers marks a pivotal advancement in semiconductor technology. This development not only reduces production costs by 40 percent but also paves the way for extensive applications in satellite communications and electric vehicles, among other sectors. With GaN’s exceptional properties and rising production capabilities, the semiconductor industry is expected to undergo transformative changes in the coming years.

Original Source: www.scmp.com

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